Comparison of phonon scattering in nanowire field effect transistors with Si, GaAs and InGaAs cores using the NEGF formalism

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Price, A.^1 ; Martinez, A.^1

College of Engineering, Swansea University, United Kingdom^1

关键词: Core material;    Drain bias;    Effective mass approximation;    Electron phonon scattering;    High gate bias;    Non-equilibrium Green's function;    Tight binding;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012019/pdf
DOI  :  10.1088/1742-6596/647/1/012019

来源: IOP

【 摘 要 】

Using the Non-equilibrium Green's Function (NEGF) formalism, the impact of electron- phonon scattering on the performance of different core nanowire field effect transistors (NWFETs) has been investigated. Three core materials have been considered: Si, GaAs and InGaAs. The effective mass approximation has been used, with masses extracted from tight- binding simulations. The ID-VGcharacteristics at low and high drain bias are shown. It was found that at low drain bias, scattering caused a 86%, 72% and 50% percentage reduction in the current at high gate bias in the Si, GaAs and InGaAs core, 2.2 × 2.2 nm2cross-section NWFETs respectively. The phonon-limited mobility and percentage tunnelling have also been calculated.