The optoelectronic properties of a solar energy material: Ag2HgSnS4

7th Maghreb Days of Material Sciences

Hadjri Mebarki, S.^1 ; Amrani, B.^1 ; Driss Khodja, K.^1 ; Khelil, A.^1

University d'Oran Ahmed Ben Bella, Laboratoire des Couches Minces et Matériaux pour l'Electronique, BP 1524 El Mnaouer Oran, Algeria^1

关键词: Dielectric functions;    Electronic and optical properties;    Energy loss function;    Exchange correlations;    Full potential linearized augmented plane waves;    Generalized gradient approximations;    Optoelectronic properties;    Solar energy materials;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/186/1/012026/pdf
DOI  :  10.1088/1757-899X/186/1/012026

来源: IOP

【 摘 要 】

We used an ab initio full potential-linearized augmented plane wave technique within the density functional theory to study the structural and optoelectronic properties of Ag2HgSnS4in a wurtzite-stannite phase. The exchange correlation effects are included through the generalized gradient approximation and modified Becke-Johnson exchange potential. Various physical quantities, such as lattice parameter, bulk modulus, band structure and density of states, are given. Also, we have presented the results of the effective mass for the electrons in the CB and the holes in the BV. We show that the modified Becke-Johnson exchange potential can predict the energy band gap in better agreement with the experiment. In addition the dielectric function and energy-loss function are presented for the energy range of 0-26 eV. The electronic and optical properties indicate that this compound can be successfully used in optoelectronic devices.