Study of point defects in as-drawn and irradiated Ge-doped optical fibers using cathodoluminescence

2016 International Conference on Defects in Insulating Materials

Reghioua, I.^1 ; Girard, S.^1 ; Alessi, A.^1 ; Francesca, D. Di^1 ; Marin, E.^1 ; Morana, A.^1 ; Fanetti, M.^2 ; Martin-Samos, L.^2 ; Richard, N.^3 ; Raine, M.^3 ; Valant, M.^2 ; Boukenter, A.^1 ; Ouerdane, Y.^1

Univ-Lyon, Laboratoire Hubert Curien, UMR CNRS 5516, Saint-Etienne, France^1

Materials Research Laboratory, University of Nova Gorica, Vipavska 11c, Ajdovscina

5270, Slovenia^2

CEA, DAM, DIF, Arpajon

F-91297, France^3

关键词: Electron exposure;    Emission bands;    Experimental investigations;    Experimental set up;    Lone pair;    Photoluminescence measurements;    Spatially resolved;    UV lasers;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/169/1/012006/pdf
DOI  :  10.1088/1757-899X/169/1/012006

来源: IOP

【 摘 要 】

In the present paper, we report an experimental investigation of Ge-doped Optical Fibers (OFs) which were investigated by Cathodoluminescence (CL) measurements. We followed the evolution, under 10 keV electron exposure, of the emissions present in three different samples: the first one was the as-drawn fiber (pristine), the second one was irradiated with a CW UV laser at 244 nm and the last one was irradiated at the dose of 9 MGy (SiO2) by γ-rays. Moreover, taking advantage of the employed experimental set-up, which allows to perform spatially-resolved (