Competing nucleation of islands and nanopits in zinc-blend Ill-nitride quaternary material system

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Gambaryan, K.M.^1 ; Aroutiounian, V.M.^1 ; Simonyan, A.K.^1 ; Yeranyan, L.S.^1

Department of Physics of Semiconductors and Microelectronics, Yerevan State University, 1 Alex Manoukyan, Yerevan

025, Armenia^1

关键词: Continuum elasticity;    Critical energy;    Growth mechanisms;    Material systems;    Mis-match ratio;    Nanopits;    Quaternary materials;    Wetting layer;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012009/pdf
DOI  :  10.1088/1757-899X/151/1/012009

来源: IOP

【 摘 要 】

The growth mechanism of quantum dots (QDs), nanopits and collaborative QDs- nanopits structures in GaN-InN-AlN material system is theoretically investigated using the continuum elasticity model. The islands energy versus their volume, as well as the critical energy and volume versus the island and wetting layer lattice constants relative mismatch ratio (strain s), are calculated. It is shown that when the zinc-blend GaN is used as a substrate and when the strain between the wetting layer and a substrate overcomes critical ∗ = 0.039 value, instead of QDs nucleation, the formation of nanopits becomes energetically preferable. Revealed feature is critical and has to be taking into account at QDs engineering in GaInAlN material system.