Simulating 1.55 ?m Optical Gain in Type-II InAlAs/InGaAs/GaAsSb Nanoscale Heterostructure

International Conference on Startup Ventures: Technology Developments and Future Strategies

社会科学（总论）

Khan, A.M.^1 ; Bhardwaj, Garima^2 ; Abu-Samak, M.^3 ; Saeed, S.H.^1 ; Alvi, P.A.^4

Department of Electronics and Communication Engineering, Integral University, Lucknow, UP

226026, India^1

Department of Electronics, Banasthali Vidyapith, Banasthali, Rajasthan

304022, India^2

Department of Physics, Al-Hussein Bin Talal University, P.O. Box 20, Ma'an, Jordan^3

Department of Physics, Banasthali Vidyapith, Banasthali, Rajasthan

304022, India^4

关键词: Design simulations;    InAlAs;    Material systems;    Nano scale;    Nature likes;    Near-IR;    Other properties;    Type II;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/594/1/012003/pdf
DOI  :  10.1088/1757-899X/594/1/012003

学科分类：社会科学、人文和艺术（综合）

来源: IOP

【 摘 要 】

This particular work has been designed to give an idea regarding W shaped nano based type II heterostructure and for the above particular design simulation concept have also been carried out in a theoretical way to obtain optical gain for the given material system InAlAs/InGaAs/GaAsSb, which is used to be operated at 1.55 μm near IR. The designed heterostructure contains two quantum wells (width ∼ 2 nm) of InGaAs material. To solve the carrier's localities within the heterostructure, k.p method has been adopted. As far as calculations are concerned we have opted a defined phenomena to measure the significant characteristics with respective to optical nature like dispersion, gain and many other properties have also been found in order to get good results that would be helpful to emit radiations of the order of the working wavelength and to employ great communication systems applications that can be optical fiber based.