Simulation of carbon nanotube field effect transistors using NEGF

International Conference on Advances in Materials and Manufacturing Applications 2016

Aravind, S.^1 ; Shravan, S.^1 ; Shrijan, S.^1 ; Sanjeev, R Venkat^1 ; Sundari, B Bala Tripura^1

Department of Electronics and Communication Engineering, Amrita School of Engineering, Amrita Vishwa Vidhyapeetham, Amrita University, Coimbatore, India^1

关键词: Channel materials;    Device description;    IV characteristics;    Nearest neighbour;    Non-equilibrium Green's function;    Output characteristics;    Temperature dependence;    Tight-binding approximations;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/149/1/012183/pdf
DOI  :  10.1088/1757-899X/149/1/012183

来源: IOP

【 摘 要 】

A nearest neighbour tight binding approximation for analysing the I-V characteristics of ballistic CNTFETs is developed making use of the non-equilibrium green's function (NEGF) formalism. NEGF provides a matrix based computational since device description at the atomic level can be employed and multiple quantum phenomenon that are visible in real time can be effectively modelled. The proposed model involves zig-zag CNTs as the channel material with a 25nm channel length that uses a basis transformation to decouple the channel Hamiltonian. Temperature dependence on the output characteristics of CNTFETs with varying chirality is also studied. All simulations are carried out on MATLAB.