Investigation of radiation-induced transformations in thin NbN films by analytical electron microscopy

10th International School-Conference on Materials for Extreme Environment: Development, Production and Application

Prikhodko, K.^1,2 ; Gurovich, B.^1 ; Dement'Eva, M.^1 ; Kutuzov, L.^1 ; Komarov, D.^1

National Research Centre, Kurchatov Institute, Kurchatov sq.1, Moscow

123182, Russia^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe highway, 31, Moscow

115409, Russia^2

关键词: Analytical electron microscopy;    Electrical conductivity;    Free-electron density;    Ion beam irradiation;    Irradiated materials;    Low energy electrons;    Radiation-induced;    Scanning transmission electron microscopy;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/130/1/012058/pdf
DOI  :  10.1088/1757-899X/130/1/012058

来源: IOP

【 摘 要 】

This work demonstrates implementation of low energy electron energy loss technique (EELS) in scanning transmission electron microscopy (STEM) to investigate the changes of free electron density at room temperature in ultra-thin NbN films under composite ion beam irradiation up to the deses of ∼3 d.p.a. for nitrogen atoms. It was found the constant value of the free electron density ∼1.6 •1029m-3in this dose range while the irradiated material was characterized by metal type of electrical conductivity.