Plasma chemical silicon etching process*

19th International Scientific Conference Reshetnev Readings 2015

Rudenko, K.V.^1 ; Miakonkih, A.V.^1 ; Rogojin, A.E.^1 ; Bogdanov, S.V.^2 ; Sidorov, V.G.^2 ; Kovalev, I.V.^2

Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia^1

Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russia^2

关键词: Cryogenic plasma;    Deep holes;    High aspect ratio;    Silicon etching;    Silicon layer;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/122/1/012028/pdf
DOI  :  10.1088/1757-899X/122/1/012028

来源: IOP

【 摘 要 】

The cryogenic plasma chemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.