Automated and inexpensive method to manufacture solid- state nanopores and micropores in robust silicon wafers

3rd International Meeting for Researchers in Materials and Plasma Technology; 1st Symposium on Nanoscience and Nanotechnology

物理学;材料科学

Vega, M.^1 ; Granell, P.^2 ; Lasorsa, C.^1 ; Lerner, B.^1 ; Perez, M.^1

Universidad Tecnológica Nacional, Buenos Aires, Argentina^1

INTI-CMNB, San-Martín, Buenos Aires, Argentina^2

关键词: Etching process;    Extreme conditions;    Fabrication process;    Pore formation;    Silicon etching;    Silicon wafer substrates;    Solid-state nanopore;    Strong acids;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/687/1/012029/pdf
DOI  :  10.1088/1742-6596/687/1/012029

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this work an easy, reproducible and inexpensive technique for the production of solid state nanopores and micropores using silicon wafer substrate is proposed. The technique is based on control of pore formation, by neutralization etchant (KOH) with a strong acid (HCl). Thus, a local neutralization is produced around the nanopore, which stops the silicon etching. The etching process was performed with 7M KOH at 80°C, where 1.23μ m/min etching speed was obtained, similar to those published in literature. The control of the pore formation with the braking acid method was done using 12M HCl and different extreme conditions: i) at 25°C, ii) at 80°C and iii) at 80°C applying an electric potential. In these studies, it was found that nanopores and micropores can be obtained automatically and at a low cost. Additionally, the process was optimized to obtain clean silicon wafers after the pore fabrication process. This method opens the possibility for an efficient scale-up from laboratory production.