Semiconductor Film Grown on a Circular Substrate: Predictive Modeling of Lattice-Misfit Stresses

International Conference on Materials, Processing and Product Engineering 2015

Suhir, E.^1,2,3 ; Nicolics, J.^2 ; Khatibi, G.^2 ; Lederer, M.^2

Portland State University, Portland

OR, United States^1

Technical University, Vienna, Austria^2

ERS Co., Los Altos

CA

94024, United States^3

关键词: Cohesive strength;    GaN technology;    Interfacial shearing stress;    Lattice misfits;    Long-term strength;    Predictive modeling;    Semiconductor films;    Theory of elasticity;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/119/1/012029/pdf
DOI  :  10.1088/1757-899X/119/1/012029

来源: IOP

【 摘 要 】

An effective and physically meaningful analytical predictive model is developed for the evaluation the lattice-misfit stresses (LMS) in a semiconductor film grown on a circular substrate (wafer). The two-dimensional (plane-stress) theory-of-elasticity approximation (TEA) is employed in the analysis. The addressed stresses include the interfacial shearing stress, responsible for the occurrence and growth of dislocations, as well as for possible delaminations and the cohesive strength of a buffering material, if any. Normal radial and circumferential (tangential) stresses acting in the film cross-sections and responsible for its short- and long-term strength (fracture toughness) are also addressed. The analysis is geared to the GaN technology.