Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method

International Conference on Materials Science and Technology 2012

Ali, A. V. Muhammed^1 ; Kekuda, Dhananjaya^1

Department of Physics, Manipal University, Manipal, Karnataka, India^1

关键词: Annealing temperatures;    Different thickness;    Indium oxide films;    Indium oxide thin films;    Oxygen partial pressure;    Partial oxygen pressures;    Reactive evaporation;    Thickness of the film;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/73/1/012027/pdf
DOI  :  10.1088/1757-899X/73/1/012027

来源: IOP

【 摘 要 】

Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical properties of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a constant annealing temperature. It was found that the band gap varies from 3.5 to 3.8eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at different annealing temperature was carried out.