会议论文详细信息
International Symposium on Interfacial Joining and Surface Technology 2013
Microstructure of interface between Si chip and tape-type Ag nanoparticle sheet
Mutoh, Hayato^1 ; Moriyama, Naoki^1 ; Kaneko, Keiya^1 ; Miyazawa, Yasuyuki^1 ; Kida, Hitoshi^2
Tokai University, Hiratsuka-shi, Kanagawa-ken
259-1292, Japan^1
Alent Japan Co., Hiratsuka-shi, Kanagawa-ken, Alpha, Japan^2
关键词: Au thin films;    Cleaved surfaces;    Electronic device;    Focused-ion-beam system;    Joining materials;    Joining process;    Nanoparticle sheets;    Organic binders;   
Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/61/1/012012/pdf
DOI  :  10.1088/1757-899X/61/1/012012
来源: IOP
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【 摘 要 】

A Ag nanoparticles-based technology for joining semiconductor materials through sintering has been developed. Currently, a paste consisting of Ag nanoparticles is used for die bonding in the electronics industry. A binder-free Ag nanojoining material has been developed for fabricating electronic devices. In this study, we investigated the joining ability of this binder-free tape-type Ag nanojoining material with respect to Si chips. A paste-type Ag nanojoining material that contained an organic binder was also investigated for comparison. The microstructures of the Si-joining material interfaces were observed using a focused ion beam system. The cleaved surfaces of the joints were observed using scanning electron microscopy. High-quality joints that contained only a few pores could be formed between a Au thin film electroplated on the Si chip and the tape-type material after sintering, owing to the simplicity of the joining process and the binder-free nature of the joining material.

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