Microstructure of interface between Si chip and tape-type Ag nanoparticle sheet

International Symposium on Interfacial Joining and Surface Technology 2013

Mutoh, Hayato^1 ; Moriyama, Naoki^1 ; Kaneko, Keiya^1 ; Miyazawa, Yasuyuki^1 ; Kida, Hitoshi^2

Tokai University, Hiratsuka-shi, Kanagawa-ken

259-1292, Japan^1

Alent Japan Co., Hiratsuka-shi, Kanagawa-ken, Alpha, Japan^2

关键词: Au thin films;    Cleaved surfaces;    Electronic device;    Focused-ion-beam system;    Joining materials;    Joining process;    Nanoparticle sheets;    Organic binders;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/61/1/012012/pdf
DOI  :  10.1088/1757-899X/61/1/012012

来源: IOP

【 摘 要 】

A Ag nanoparticles-based technology for joining semiconductor materials through sintering has been developed. Currently, a paste consisting of Ag nanoparticles is used for die bonding in the electronics industry. A binder-free Ag nanojoining material has been developed for fabricating electronic devices. In this study, we investigated the joining ability of this binder-free tape-type Ag nanojoining material with respect to Si chips. A paste-type Ag nanojoining material that contained an organic binder was also investigated for comparison. The microstructures of the Si-joining material interfaces were observed using a focused ion beam system. The cleaved surfaces of the joints were observed using scanning electron microscopy. High-quality joints that contained only a few pores could be formed between a Au thin film electroplated on the Si chip and the tape-type material after sintering, owing to the simplicity of the joining process and the binder-free nature of the joining material.