Impedance and admittance characteristics of Bi2S3 nanowire arrays

International Conference on Functional Materials and Nanotechnologies 2013

材料科学;物理学

Katkevics, J.^1 ; Kunakova, G.^1 ; Viksna, A.^1 ; Holmes, J.D.^2 ; Erts, D.^1

Institute of Chemical Physics, University of Latvia, Raina blv 19, LV-1586 Riga, Latvia^1

Department of Chemistry, University College Cork, Dublin 2, Ireland^2

关键词: AAO membrane;    Anodised aluminum;    Double-layer capacitance;    Electrical impedance;    Electrochemical impedance;    Frequency scans;    Nanoporous arrays;    Nanowire arrays;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/49/1/012007/pdf
DOI  :  10.1088/1757-899X/49/1/012007

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3nanowire arrays were studied.