International Conference on Energy Sciences 2016 | |
Modeling the Thermal Response of Al0.3Ga0.7As/GaAs/Ge Multijunction Solar Cells | |
能源学;物理学 | |
Sumaryada, T.^1 ; Damayanti, N.E.^1 ; Rohaeni, S.^1 ; Syafutra, H.^1 ; Irzaman^1 ; Maddu, A.^1 ; Hardhienata, H.^1 ; Alatas, H.^1 | |
Department of Physics, Bogor Agricultural University, Jalan Meranti Kampus IPB, Dramaga Bogor | |
16680, Indonesia^1 | |
关键词: Effect of temperature; Electronic transport properties; Increasing temperatures; Multi-junction structures; Overall efficiency; Simulation approach; Solar cell simulation; Thermal response; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/877/1/012030/pdf DOI : 10.1088/1742-6596/877/1/012030 |
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来源: IOP | |
【 摘 要 】
The III-V group of semiconductor materials are well-known for their excellent performance as high efficient solar cells. This type of material is usually arranged in a multijunction structure which allows a continuous absorption of sun's radiation. The electronic transport properties of semiconductor materials are influenced by the temperature. In this paper, the effect of temperature to the performance of Al0.3Ga0.7As/GaAs/Ge multijunction solar cells was evaluated using a simulation approach. By varying the temperature of materials to 25 °C, 50 °C, 75 °C and 100 °C in PC1D solar cell simulation, we were able to determine the performance of each cell and the overall efficiency of Al0.3Ga0.7As/GaAs/Ge multijunction solar cells. The results have shown that the increasing temperature of the materials will reduce the Vocof each cell by -1.40 mV/°C, -1.40 mV/°C and -1.30 mV/°C respectivelly, while the total efficiency of multijunction solar cells was reduced by -0.106%/°C.
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Modeling the Thermal Response of Al0.3Ga0.7As/GaAs/Ge Multijunction Solar Cells | 547KB | download |