Modeling the Thermal Response of Al0.3Ga0.7As/GaAs/Ge Multijunction Solar Cells

International Conference on Energy Sciences 2016

能源学;物理学

Sumaryada, T.^1 ; Damayanti, N.E.^1 ; Rohaeni, S.^1 ; Syafutra, H.^1 ; Irzaman^1 ; Maddu, A.^1 ; Hardhienata, H.^1 ; Alatas, H.^1

Department of Physics, Bogor Agricultural University, Jalan Meranti Kampus IPB, Dramaga Bogor

16680, Indonesia^1

关键词: Effect of temperature;    Electronic transport properties;    Increasing temperatures;    Multi-junction structures;    Overall efficiency;    Simulation approach;    Solar cell simulation;    Thermal response;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/877/1/012030/pdf
DOI  :  10.1088/1742-6596/877/1/012030

来源: IOP

【 摘 要 】

The III-V group of semiconductor materials are well-known for their excellent performance as high efficient solar cells. This type of material is usually arranged in a multijunction structure which allows a continuous absorption of sun's radiation. The electronic transport properties of semiconductor materials are influenced by the temperature. In this paper, the effect of temperature to the performance of Al0.3Ga0.7As/GaAs/Ge multijunction solar cells was evaluated using a simulation approach. By varying the temperature of materials to 25 °C, 50 °C, 75 °C and 100 °C in PC1D solar cell simulation, we were able to determine the performance of each cell and the overall efficiency of Al0.3Ga0.7As/GaAs/Ge multijunction solar cells. The results have shown that the increasing temperature of the materials will reduce the Vocof each cell by -1.40 mV/°C, -1.40 mV/°C and -1.30 mV/°C respectivelly, while the total efficiency of multijunction solar cells was reduced by -0.106%/°C.