Study on KLL dielectronic recombination for highly charged tungsten ions at Shanghai EBIT

30th International Conference on Photonic, Electronic, and Atomic Collisions

Tu, B.^1 ; Xiao, J.^1 ; Yao, K.^1 ; Shen, Y.^1 ; Yang, Y.^1 ; Lu, D.^1 ; Fu, Y.Q.^1 ; Wei, B.^1 ; Zheng, C.^1 ; Huang, L.Y.^1 ; Hutton, R.^1 ; Zou, Y.^1

Shanghai EBIT Laboratory, Institute of Modern Physics, Fudan University, Key Laboratory of Applied Ion Beam Physics, Chinese Ministry of Education, China^1

关键词: Dielectronic recombinations;    Interference effects;    Resonance levels;    Resonance strengths;    Theoretical study;    Tungsten ions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/875/6/052006/pdf
DOI  :  10.1088/1742-6596/875/6/052006

来源: IOP

【 摘 要 】

Synopsis This work reported both experimental and theoretical study on KLL dielectronic recombination for Helike up to O-like tungsten ions, including resonance levels, resonance strengths and interference effect.