Line Profile Property of Autoionizing States

29th International Conference on Photonic, Electronic, and Atomic Collisions

Tu, B.^1 ; Xiao, J.^1 ; Yao, K.^1 ; Shen, Y.^1 ; Yang, Y.^1 ; Lu, D.^1 ; Fu, Y.Q.^1 ; Wei, B.^1 ; Zheng, C.^1 ; Huang, L.Y.^1 ; Hutton, R.^1 ; Zou, Y.^1

Shanghai EBIT Laboratory, Institute of Modern Physics, Fudan University, Key Laboratory of Applied Ion Beam Physics, Chinese Ministry of Education, China^1

关键词: Autoionizing state;    Dielectronic recombinations;    Interference effects;    Line profiles;    Lorentzian line;    Radiative recombination;    Tungsten ions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/635/5/052037/pdf
DOI  :  10.1088/1742-6596/635/5/052037

来源: IOP

【 摘 要 】

This work studied the interference effect between dielectronic recombination and radiative recombination of highly charged tungsten ions. Our result shows a coexistence of Fano and Lorentzian line profile of autoionizing states.