Dependencies of photoelectric properties of SiC/Si structures grown by the method of atoms substitution on synthesis time

24th International Conference on Vacuum Technique and Technology

Grashchenko, A.S.^1 ; Kukushkin, S.A.^1 ; Osipov, A.V.^1 ; Feoktistov, N.A.^1,2

Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, Saint Petersburg

199178, Russia^1

Ioffe Physicotechnical Institute, Russian Academy of Sciences, Saint Petersburg

194021, Russia^2

关键词: Photoelectric characteristics;    Photoelectric property;    Saturation current;    Silicon substrates;    Substitution method;    Synthesis time;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/872/1/012030/pdf
DOI  :  10.1088/1742-6596/872/1/012030

来源: IOP

【 摘 要 】

This paper is dedicated to an exploration of the photoelectric properties of Si-SiC structures grown by the substitution method on silicon substrates of (001) orientation. For the samples with the synthesis times of 40, 60, 90, 120 and 900 s, magnitudes of the saturation currents are determined and the coefficients of efficiency are calculated. The obtained dependencies of the photoelectric characteristics on the synthesis time are explained using the theory of formation of dilatation dipoles during the synthesis by the method of atoms substitution.