Influence of Annealing Temperature on Mn-doped ZnO Diluted Magnetic Semiconductor Thin Films

33rd International Conference on the Physics of Semiconductors

Zhang, Yu^1 ; Nasu, Naho^1 ; Zhao, Xinwei^1

Department of Physics, Tokyo University of Science, Tokyo

1628601, Japan^1

关键词: Annealing temperatures;    Crystallinities;    Mn-doped ZnO;    Mn-doped ZnO thin films;    Optimum temperature;    Radio frequency magnetron sputtering;    Wurtzite structure;    ZnO matrix;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012061/pdf
DOI  :  10.1088/1742-6596/864/1/012061

来源: IOP

【 摘 要 】

In this paper, we report the effects of Mn2+and the defect on ferromagnetism in Mn-doped ZnO thin films prepared by radio frequency magnetron sputtering at different annealing temperature below 600 °C. The result of superconducting quantum interference device reveals that the sample which annealed at 500 °C realized ferromagnetism till room temperature. The X-ray diffraction results shows that the samples are wurtzite structure and the sample annealed at optimum temperature gets relatively better crystallinity. X-ray photoelectron spectroscopy results show clear evidence of oxygen vacancy increment for the samples which annealed at 500 °C. Our results indicate that Mn2+ions replace the Zn sites and no evidence for either metallic Mn or Mn-related oxide in the samples. It was concluded that the existence of ferromagnetism was closely related to the concentration of Mn2+and the defect of the ZnO matrix.