Charge carrier mobility in semiconductor solid solutions and percolation phenomena

33rd International Conference on the Physics of Semiconductors

Rogacheva, E.^1 ; Nashchekina, O.^1 ; Martynova, E.^1

National Technical University Kharkov Polytechnic Institute, Kharkov, Ukraine^1

关键词: Alloy scattering;    Critical phenomenon;    Heavy doping;    Impurity centers;    Percolation phenomenon;    Percolation theory;    Semiconductor solid solutions;    Spatial correlations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012027/pdf
DOI  :  10.1088/1742-6596/864/1/012027

来源: IOP

【 摘 要 】

The existence of a range of an anomalous growth in charge carrier mobility under the transition to heavy doping is established for Bi2Te3-Sb2Te3solid solutions. This confirms our suggestion about the universal character of critical phenomena accompanying the transition from impurity discontinuum to impurity continuum. The experimental results are analyzed in terms of percolation theory taking into account alloy scattering and spatial correlations of impurity centers.