Growth of InAs NWs with controlled morphology by CVD

33rd International Conference on the Physics of Semiconductors

Huang, Y.S.^1 ; Li, M.^2 ; Wang, J.^1 ; Xing, Y.^1 ; Xu, H.Q.^1,2

Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing

100871, China^1

Division of Solid-State Physics, Lund University, Box 118, Lund

S-221 00, Sweden^2

关键词: Chemical vapor depositions (CVD);    Controlled morphology;    Growth parameters;    Low costs;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012013/pdf
DOI  :  10.1088/1742-6596/864/1/012013

来源: IOP

【 摘 要 】

We report on the growth of single crystal InAs NWs on Si/SiOxsubstrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOxsubstrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.