会议论文详细信息
33rd International Conference on the Physics of Semiconductors | |
Growth of InAs NWs with controlled morphology by CVD | |
Huang, Y.S.^1 ; Li, M.^2 ; Wang, J.^1 ; Xing, Y.^1 ; Xu, H.Q.^1,2 | |
Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing | |
100871, China^1 | |
Division of Solid-State Physics, Lund University, Box 118, Lund | |
S-221 00, Sweden^2 | |
关键词: Chemical vapor depositions (CVD); Controlled morphology; Growth parameters; Low costs; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012013/pdf DOI : 10.1088/1742-6596/864/1/012013 |
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来源: IOP | |
【 摘 要 】
We report on the growth of single crystal InAs NWs on Si/SiOxsubstrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOxsubstrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.
【 预 览 】
Files | Size | Format | View |
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Growth of InAs NWs with controlled morphology by CVD | 166KB | download |