The method of measuring the thermoelectric power in the thin films of the semimetals and narrow-gap semiconductors formed on the thin substrates

13th International Conference on Films and Coatings

Demidov, E.V.^1 ; Grabov, V.M.^1 ; Komarov, V.A.^1 ; Suslov, A.V.^1 ; Suslov, M.V.^1

Herzen University, Saint Petersburg

191186, Russia^1

关键词: Gradient plates;    Mechanical stress;    Narrow-gap semiconductors;    Reliable results;    Substrate material;    Temperature dependence;    Thermal expansion coefficients;    Thin substrate;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/857/1/012006/pdf
DOI  :  10.1088/1742-6596/857/1/012006

来源: IOP

【 摘 要 】

In our paper we propose the method for measuring the thermoelectric power of thin semimetals films and narrow-gap semiconductors on the thin substrates. This method eliminates the occurrence of mechanical stresses due to different thermal expansion coefficients of the substrate material and the gradient plates. We compared the thermopowers' temperature dependences obtained by the new method of measuring and by the standard method for thin films Bi1-xSbxon a substrate of mica. With the help of our method it is possible to get more reliable results for thin films of semimetals and narrow-gap semiconductors formed on thin substrates.