Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Vinnichenko, M. Ya^1 ; Makhov, I.S.^1 ; Panevin, V. Yu^1 ; Selivanov, A.V.^1 ; Firsov, D.A.^1 ; Vorobjev, L.E.^1 ; Pikhtin, N.A.^2 ; Bakhvalov, K.V.^2 ; Shterengas, L.^3 ; Belenky, G.^3 ; Kipshidze, G.^3

Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia^1

Ioffe Physical Technical Institute, St. Petersburg, Russia^2

State University of New York, Stony Brook

NY, United States^3

关键词: Electron heating;    Interband;    Midinfrared;    Monocrystalline;    Narrow-gap semiconductors;    Recombination radiation;    Strong electric fields;    Temperature range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012148/pdf
DOI  :  10.1088/1742-6596/741/1/012148

来源: IOP

【 摘 要 】

Spectra of the mid-infrared interband luminescence under interband optical pumping and impact ionization in strong electric fields are experimentally studied in the InAsSb epilayer and in the monocrystalline InSb in the temperature range from 10 K to 85 K. The recombination radiation anisotropy in InSb arising due to electron heating and drift in strong electric fields is observed.