Analysis of thin layer optical properties of A-Si:H P-Type doping CH4 and P-Type without CH4 is deposited PECVD systems

International Conference on Physical Instrumentation and Advanced Materials

物理学;材料科学

Prayogi, Soni^1 ; Ayunis^1 ; Kresna^1 ; Cahyono, Yoyok^1 ; Akidah^2 ; Darminto^1

Department of Physics-FMIPA, Institut Teknologi Sepuluh Nopember (ITS), Indonesia^1

LPPM Institut Teknologi Sepuluh Nopember (ITS), Indonesia^2

关键词: Glass substrates;    Hydrogen gas;    Hydrogenated amorphous silicon (a-Si:H);    Layer morphology;    Layer thickness;    Optical energy band gap;    P-type doping;    Wavelength ranges;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/853/1/012032/pdf
DOI  :  10.1088/1742-6596/853/1/012032

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The study of a thin layer growth of hydrogenated amorphous silicon (a-Si: H) using the technique of plasma enhancing chemical vapor deposition (PECVD) has been conducted. Material a-Si: H is one type of materials that is applied as solar cells. In this study, a thin layer of a-Si: H grown on glass substrates by using CH4and without CH4. Most sources Si gas were used in silane gas (SiH4) 20% dissolved in hydrogen gas (H2). The addition of CH4gas greatly affects the structure of layer morphology and energy gap in thin layers. Based on the results of characterization using AFM, it was obtained a layer thickness which was added by CH4100 nm and layer thickness of 45 nm without CH4. While the optical energy band gap were conducted, based on the data from characterization using UV-Vis in the wavelength range of 400-800 nm, it was obtained layer optical energy band gap added by CH4that was 1,95 eV and layer without CH4that was 1.89 eV.