A CMOS Microdisplay Utilizing Hot Carrier Electroluminescence From Reverse-biased Si PN Junctions

6th conference on Advances in Optoelectronics and Micro/nano-optics

Xu, Kaikai^1 ; Snyman, Lukas W.^2 ; Polleux, Jean-Luc^3 ; Aharoni, Herzl^4

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu

610054, China^1

Department of Electrical Engineering, University of South Africa, Pretoria

392, 0001, South Africa^2

Université Paris-Est, ESYCOM, ESIEE Paris, le Cnam, UPEM, Noisy-le-Grand

93162, France^3

Department of Electrical and Computer Engineering, Ben-Gurion University, Beer-Sheva

84105, Israel^4

关键词: Fingerprint sensors;    Light emitting devices;    Microdisplays;    Monolithically integrated;    Reverse bias;    Si p-n junctions;    Visible light;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/844/1/012040/pdf
DOI  :  10.1088/1742-6596/844/1/012040

来源: IOP

【 摘 要 】

The emission of visible light by a monolithically integrated Si p-n junction under reverse bias is presented, and a fully CMOS integrated optical-type fingerprint sensor using Si light emitting devices is achieved.