The measurement of electrostatic potentials in core/shell GaN nanowires using off-axis electron holography

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Yazdi, S.^1 ; Kasama, T.^1 ; Ciechonski, R.^2 ; Kryliouk, O.^3 ; Wagner, J.B.^1

Center for Electron Nanoscopy, Technical University of Denmark, Lyngby, Denmark^1

GLO-AB, Ideon Science Park, Lund, Sweden^2

GLO-USA, Sunnyvale, CA, United States^3

关键词: Building blockes;    Built-in potential;    Electrostatic potential distribution;    Electrostatic potentials;    Focused ion beam milling;    Light emitting devices;    Off-axis electron holography;    Potential barriers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012041/pdf
DOI  :  10.1088/1742-6596/471/1/012041

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Core-shell GaN nanowires are expected to be building blocks of future light emitting devices. Here we apply off-axis electron holography to map the electrostatic potential distributions in such nanowires. To access the cross-section of selected individual nanowires, focused ion beam (FIB) milling is used. Furthermore, to assess the influence of FIB damage, the dopant potential measured from an intact NW is compared with a FIB prepared one. It is shown that in addition to the built-in potential between the p-type shell and unintentionally n-type under-layer there is a potential barrier between the core and under-layer which are both unintentionally n-type doped.