Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

6th conference on Advances in Optoelectronics and Micro/nano-optics

Xu, J.^1 ; Zhai, Y.Y.^1 ; Cao, Y.Q.^1,2 ; Chen, K.J.^1

National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Jiangsu Provincial, Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing

210093, China^1

College of Physics Science and Technology, Yangzhou University, Yangzhou

225002, China^2

关键词: Anti reflection;    Device properties;    Photovoltaic devices;    Si quantum dot;    Surface passivation;    Surface recombinations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/844/1/012001/pdf
DOI  :  10.1088/1742-6596/844/1/012001

来源: IOP

【 摘 要 】

Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO2or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed.