Influence of a high-frequency pulsed nanosecond diffusion discharge in the nitrogen atmosphere on the electrical characteristics of a CdHgTe epitaxial films

5th International Congress on Energy Fluxes and Radiation Effects 2016

Grigoryev, D.^1,2 ; Voitsekhovskii, A.^1 ; Korotaev, A.^1 ; Lyapunov, D.^1 ; Lozovoy, K.^1 ; Tarasenko, V.^2 ; Shulepov, M.^2 ; Erofeev, M.^2 ; Ripenko, V.^3 ; Dvoretskii, S.^1,4 ; Mikhailov, N.^4

Tomsk State University, 36 Lenin Av., Tomsk

634050, Russia^1

Institute of High Current Electronics, 2/3 Akademichesky, Tomsk

634055, Russia^2

Tomsk Polytechnic University, 30 Lenin Av., Tomsk

634050, Russia^3

Semiconductor Physics SB RAS, 13 Lavrentyeva, Novosibirsk

630090, Russia^4

关键词: Electrical characteristic;    Electrophysical parameters;    Electrophysical properties;    High conductivity;    High frequency HF;    N-type conduction;    Nitrogen atmospheres;    Volume discharges;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/830/1/012082/pdf
DOI  :  10.1088/1742-6596/830/1/012082

来源: IOP

【 摘 要 】

The effect of a high-frequency nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (CMT) epitaxial films is studied. The measurement of the electrophysical parameters of the CMT specimens upon irradiation shows that that the action of pulses of nanosecond volume discharge leads to changes in the electrophysical properties of CMT epitaxial films due to formation of a near-surface high-conductivity layer of the n-type conduction. The preliminary results show that it is possible to use such actions in the development of technologies for the controlled change of the properties of CMT narrow-band solid solutions and production of structures heterogeneous with respect to conduction.