DBD tranformerless power supplies: impact of the parasitic capacitances on the power transfer.

14th High-Tech Plasma Processes Conference

Diop, M.A.^1 ; Belinger, A.^1 ; Piquet, H.^1

LAPLACE, Université de Toulouse, CNRS, INPT, UPS, France^1

关键词: Analytical studies;    High voltage;    High voltage switches;    Over-voltages;    Parasitic capacitance;    Power supply;    Power transfers;    Transformerless;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/825/1/012004/pdf
DOI  :  10.1088/1742-6596/825/1/012004

来源: IOP

【 摘 要 】

A new transformerless power supply for DBD application is presented here. The power supply is built with 10kV SiC MOSFET. This high voltage switches allow holding the high voltage required by the DBD. An analytical study of the converter's operation is presented to deduce the power transmitted to the DBD. A comparison between the experimental and theoretical electrical waveforms is shown. The experimental waveforms are particularly affected by all the parasitic capacitances. When all the switches are in OFF state, oscillations cause over-voltages across the switches. An analysis of the effect of each capacitance is presented and demonstrates that the parasitic capacitances of the switches and of the inductance play a key role in the actual power transfer.