Contactless nondestructive method for determination of the carrier diffusion length in semiconductors and dielectrics

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Manukhov, V.V.^1 ; Fedortsov, A.B.^2

Saint Petersburg State University, Universitetskaya nab. 7/9, St. Petersburg

199034, Russia^1

Saint Petersburg Mining University, Vasil'Evskii Ostrov, 21-liniya 2, St. Petersburg

199106, Russia^2

关键词: Carrier diffusion length;    Insulator layer;    Laser Interference;    Non-equilibrium carriers;    Nondestructive methods;    Optical generation;    Scientific researches;    Silicon samples;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012041/pdf
DOI  :  10.1088/1742-6596/816/1/012041

来源: IOP

【 摘 要 】

We propose the contactless nondestructive method for determination of the carrier diffusion length in semiconductors and dielectrics. The method is based on optical generation of non-equilibrium carriers at one point of the studied sample and the laser interference measurement of their concentration at another point. When changing the distance between these points, a decrease in the carrier concentration is observed. It depends on the carrier diffusion length, which is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. We have studied silicon samples protected by an insulator layer and without any covering. The method can be used in scientific research and the electronics industry.