Numerical modeling of perovskite solar cells with a planar structure

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Malyukov, S.P.^1 ; Sayenko, A.V.^1 ; Ivanova, A.V.^2

Southern Federal University, Institute of Nanotechnologies, Electronics and Equipment Engineering, Department of Electronic Apparatuses Design, Nekrasovskii per. 44, Taganrog

347900, Russia^1

National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow

115409, Russia^2

关键词: Absorption co-efficient;    Carrier diffusion length;    Drift-diffusion approximation;    High-efficiency solar cells;    Hole transport layers;    Photoelectric characteristics;    Research and development;    Surface recombinations;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012033/pdf
DOI  :  10.1088/1757-899X/151/1/012033

来源: IOP

【 摘 要 】

The paper is devoted to the research and development of high-efficiency solar cells with a planar perovskite n-i-p structure. A numerical model of this solar cell in the drift- diffusion approximation based on Poisson equation and continuity equations provided to determine their photoelectric characteristics and design optimization. The author considers the spectral photogeneration, bulk and surface recombination, transport charge carriers in perovskite and their collection by the electron and hole transport layers. As a result of the simulation, it was obtained efficiency dependence on perovskite absorber material thickness and lifetime (diffusion length) of the charge carriers. It is found that in addition to absorption coefficient optimal perovskite thickness is determined largely by the charge carrier diffusion length, and it has the upper limit in thickness of 500-600 nm.