New plasma-assisted approach to the fabrication of Cu(In,Ga)(S,Se)2 nanowires

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Mokrov, D.A.^1 ; Zimin, S.P.^1 ; Gorlachev, E.S.^2 ; Amirov, I.I.^2 ; Naumov, V.V.^2 ; Gremenok, V.F.^3

Yaroslavl State University, Sovetskaya Street 14, Yaroslavl

150003, Russia^1

Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Universitetskaya Street 21, Yaroslavl

150007, Russia^2

Scientific-Practical Materials Research Center of the NAS of Belarus, P. Brovka Street 17, Minsk

220072, Belarus^3

关键词: Argon plasma treatment;    Average height;    Cu(In ,Ga)(S ,Se)2;    Glass substrates;    Inductively-coupled;    Nanowire formation;    Radio frequencies;    Vapor-liquid-solid growth;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012028/pdf
DOI  :  10.1088/1742-6596/816/1/012028

来源: IOP

【 摘 要 】

In this work we have applied the low-energy high-density low-pressure radio-frequency inductively coupled argon plasma treatment to the Cu(In,Ga)(S,Se)2thin films grown on glass substrates using a selenization/sulfurization process. This approach allowed to obtain nanowires with an average height varying from 120 to 240 nm and with a 15-50 nm diameter. It is shown that the mechanism of the nanowire formation is plasma-assisted vapor-liquid-solid growth in combination with micromasking with In-Ga alloy nanoinclusions serving both as catalyst droplets and micromasks.