Electrical conductivity of Cu/ZnO/Si heterostructures

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Zotov, A.O.^1 ; Perevalov, A.A.^1 ; Egorov, A.V.^2 ; Belov, A.N.^1 ; Solnyshkin, A.V.^1,2

National Research University of Electronic Technology, Shokin square, 1, Zelenograd, Moscow

124498, Russia^1

Tver State University, Zhelyabova 33, Tver

170100, Russia^2

关键词: Electrical conductivity;    IV characteristics;    Rectifying properties;    Trapping levels;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012013/pdf
DOI  :  10.1088/1742-6596/816/1/012013

来源: IOP

【 摘 要 】

The electrical conductivity studies of the Cu/ZnO/Si thin film heterostructures were carried out by the current-voltage (I-V) characteristics. It was found that the I-V characteristics were asymmetric and showed weak rectifying properties. The most probable mechanism of electrical conductivity was determined. The concentration of trapping levels and the carrier mobility were calculated.