会议论文详细信息
8th International Congress of Engineering Physics | |
Floating Gate sensor for in-vivo dosimetry in radiation therapies. Design and first characterization. | |
物理学;工业技术 | |
Faigon, A.^1 ; Vazquez, I Martinez^1 ; Carbonetto, S.^1 ; García Inza, M.^1 | |
RedinLaboratorio de Física de Dispositivos-Microelectrónica, Facultad de Ingeniería, Universidad de Buenos Aires, Argentina^1 | |
关键词: Absorbed dose; Controlled charging; Design guide; Floating gates; In-vivo; Radiotherapy treatment; Standard CMOS technology; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/792/1/012057/pdf DOI : 10.1088/1742-6596/792/1/012057 |
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学科分类:工业工程学 | |
来源: IOP | |
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【 摘 要 】
A floating gate dosimeter was designed and fabricated in a standard CMOS technology. The design guides and characterization are presented. The characterization included the controlled charging by tunneling of the floating gate, and its discharging under irradiation while measuring the transistor drain current whose change is the measure of the absorbed dose. The resolution of the obtained device is close to 1 cGy satisfying the requirements for most radiation therapies dosimetry. Pending statistical proofs, the dosimeter is a potential candidate for wide in-vivo control of radiotherapy treatments.
【 预 览 】
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Floating Gate sensor for in-vivo dosimetry in radiation therapies. Design and first characterization. | 850KB | ![]() |