Increasing the quantum efficiency of GaAs solar cells by embedding InAs quantum dots

18th International Conference PhysicA.SPb

Salii, R.A.^1 ; Mintairov, S.A.^1 ; Nadtochiy, A.M.^1,2 ; Payusov, A.S.^1,2 ; Brunkov, P.N.^1,2 ; Shvarts, M.Z.^1 ; Kalyuzhnyy, N.A.^1

Ioffe Institute, Polytechnicheskaya str. 26, St.-Petersburg

194021, Russia^1

St Petersburg Academic University, Hlopina str. 8/3, St.-Petersburg

194021, Russia^2

关键词: InAs quantum dots;    Lattice-mismatched;    Metal-organic vapor phase epitaxy;    Multimodal distributions;    Nano-heterostructures;    Photogenerated current;    Photoluminescence intensities;    Photovoltaic applications;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/769/1/012036/pdf
DOI  :  10.1088/1742-6596/769/1/012036

来源: IOP

【 摘 要 】

Development of Metalorganic Vapor Phase Epitaxy (MOVPE) technology of InAs quantum dots (QDs) in GaAs for photovoltaic applications is presented. The growth peculiarities in InAs-GaAs lattice-mismatched system were considered. The photoluminescence (PL) intensity dependences on different growth parameters were obtained. The multimodal distribution of QDs by sizes was found using AFM and PL methods. GaAs solar cell nanoheterostructures with imbedded QD arrays were designed and obtained. Ones have been demonstrated a significant increase of quantum efficiency and photogenerated current of QD solar cells due to photo effect in InAs QD array (0.59 mA/cm2for AM1.5D and 82 mA/cm2for AM0).