A study on modeling and simulation of Multiple- Gate MOSFETs

27th IUPAP Conference on Computational Physics

物理学;计算机科学

Singh, Mandeep^1 ; Kumar, Gaurav^1 ; Bordoloi, Sushanta^1 ; Trivedi, Gaurav^1

Dept. of EEE, Indian Institute of Technology Guwahati, Assam

781039, India^1

关键词: Computational physics;    Integrated circuits (ICs);    Level of integrations;    Multiple gate MOSFETs;    Off-state leakage current;    Semiconductor technology;    Short-channel effect;    Transistor density;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/759/1/012093/pdf
DOI  :  10.1088/1742-6596/759/1/012093

学科分类：计算机科学（综合）

来源: IOP

【 摘 要 】

Endless scaling of planar MOSFET over the past four decades has delivered proliferating transistor density and performance to integrated circuits (ICs) at the cost of increase in short channel effects (SCEs). As a result of narrow channel lengths in deeply scaled MOSFETs, off-state leakage current happens to increase the power requirement of device by forcing drain potential to lose its leverage over the electrostatics of channel. Multigate devices (Double Gate FET, FinFET) promise better immunity to SCEs by concealing the issues caused by scaling of planar technology, and also exhibits better scalability with increased level of integration. In this paper, a study on modeling and simulation of multiple-gate MOSFETs is presented. This paper describes the development in semiconductor technology from planar to non-planar devices, benefits of multigate MOSFETs over previous technologies. Effects of varying different parameters (such as Fin thickness, Fin height, use of different gate material etc.) in multigate (specially FinFET) devices is also described. Improvement in device physics models along with technology, and importance of computational physics for efficient modeling of nanoscale devices is presented.