Effect of temperature on (TV) statics characteristics of GaAs Mesfet

3rd Euro-Mediterranean Conference on Materials and Renewable Energies

材料科学;能源学

Fares, Z.^1 ; Saidi, Y.^2 ; Aliouat, W.^2

Department of Engineering, Faculty of Science, University of Constantine 1, Algeria^1

Department of Physics, Faculty of Exact Sciences University of Constantine 1, Algeria^2

关键词: Analytical studies;    Effect of temperature;    Fundamental equations;    Microwave applications;    Numerical computations;    Physical mechanism;    Physical parameters;    Thermal dissipation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/758/1/012011/pdf
DOI  :  10.1088/1742-6596/758/1/012011

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The GaAs metal semiconductor field effect transistors called mesfets are the most active components used in microwave applications. To better exploit the performance of these components circuits, it is necessary to develop techniques for sophisticated numerical computation based on physical mechanisms that govern the operation of these devices. The static properties of GaAs MESFET could be determined from an original analytical study based on the resolution of the semiconductor fundamental equations. Then we will study the equation of thermal resistance as a function of the physical parameters of MESFETs by analogy electric thermal resistance RTH will be determined as the ratio of the difference of temperature on the thermal dissipation. The model took into account the difference between the temperature of the component and the ambient temperature and the effect of temperature on the parameters of the component.