Characterization of pulsed laser deposition grown V2O3 converted VO2

International Conference on Recent Trends in Physics 2016

Majid, Suhail^1 ; Shukla, D.K.^2 ; Rahman, F.^1 ; Gautam, Kamini^2 ; Sathe, V.G.^2 ; Choudhary, R.J.^2 ; Phase, D.M.^2

Department of Physics, Aligarh Muslim University, Aligarh

202002, India^1

UGC-DAE Consortium for Scientific Research, Indore

452001, India^2

关键词: Controlled synthesis;    Crystalline nature;    Lower temperatures;    Post deposition annealing;    Resistivity measurement;    Silicon substrates;    Structural transitions;    Temperature-dependent raman;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/755/1/012027/pdf
DOI  :  10.1088/1742-6596/755/1/012027

来源: IOP

【 摘 要 】

Controllable tuning of Metal-insulator transition in VxOythin film has been a field of extensive research. However controlled synthesis of desired Vanadium oxide phase is a challenging task. We have successfully achieved VO2phase on Silicon substrate after post deposition annealing treatment to the PLD grown as deposited V2O3thin films. The annealed thin film was characterized by x-ray diffraction (XRD), resistivity, Raman spectroscopy, X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS) measurements. XRD confirms the crystalline nature and growth of VO2phase in thin film. The characteristic MIT was observed from resistivity measurements and transition temperature appeared at lower value around 336 K, compared to bulk VO2. The structural transition accompanied with MIT from lower temperature monoclinic phase to higher temperature Rutile phase became evident from temperature dependent Raman measurements. Chemical state of vanadium was examined using XAS and XPS measurements which confirm the presence of +4 oxidation state of vanadium in thin film.