Kinetic processes in heavily doped semiconductor heterojunctions

2nd Conference on Plasma & Laser Research and Technologies

Baskakova, A.V.^1 ; Bukhenskyy, K.V.^1 ; Dubois, A.B.^1 ; Kucheryavyy, S.I.^2 ; Mashnina, S.N.^1 ; Safoshkin, A.S.^1

Ryazan State Radioengineering University, Gagarin str. 59/1, Ryazan

390005, Russia^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe sh. 31, Moscow

115409, Russia^2

关键词: 2D electron system;    Concentration dependence;    Dielectric functions;    Energy spectra;    Fine structures;    Kinetic process;    Long-wavelength limits;    Matrix elements;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/747/1/012026/pdf
DOI  :  10.1088/1742-6596/747/1/012026

来源: IOP

【 摘 要 】

We report results of study of electron - electron relaxation processes in the 2D electrons system with the fine structure of the energy spectrum and the spatial distribution of the electron density. For heavily doped heterojunction, when two subbands are filled, expressions for the time of intra- and inter-subband electron-electron interactions, matrix elements of a complete screening potential and the dielectric function were obtained beyond the long-wavelength limit. It is shown that the oscillations of temperature and concentration dependence of the electron - electron interactions are associated with the excitation of plasma oscillations components in 2D electron system.