Investigation of thermal linear expansion for nanostructured Si0.8Ge0.2P0.022 in wide temperature range

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Rogachev, M.S.^1 ; Pavlova, L.M.^1 ; Shtern, Yu I.^1

National Research University of Electronic Technology, Zelenograd, Moscow

124498, Russia^1

关键词: Dilatometric methods;    Infrared radiation sources;    Temperature dependence;    Temperature range;    Thermal linear expansion coefficients;    Thermo-Electric materials;    Thermoelectric figure of merit;    Wide temperature ranges;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012203/pdf
DOI  :  10.1088/1742-6596/741/1/012203

来源: IOP

【 摘 要 】

The results of investigation of thermal linear expansion for high temperature thermoelectric material nanostructured Si0.8Ge0.2P0.022n-type with maximum thermoelectric figure of merit Z = 0.98 10-3K are presented. Investigations were carried out by dilatometric method in the temperature range from 300 to 1220 K in dynamic heating and cooling regimes with using of infrared radiation source. Temperature dependence of thermal linear expansion coefficient (TLEC) was analyzed. The average value of TLEC for Si0.8Ge0.2P0.022was determined, which is equal to ∼5.910-6K-1.