会议论文详细信息
International Conference on Advances in Materials and Manufacturing Applications 2016 | |
Temperature dependence electrical conduction of solution-processed CZTS films in dark and under light | |
Ghediya, Prashant R.^1 ; Chaudhuri, Tapas K.^1 ; Patel, K.C.^1 | |
Research and Development Centre, Charotar University of Science and Technology Changa, Anand District Gujarat | |
388 421, India^1 | |
关键词: Electrical conduction; Grain-boundary barriers; Hopping energies; Nearest neighbor hopping; Polycrystalline film; Solution-processed; Temperature dependence; Temperature range; | |
Others : https://iopscience.iop.org/article/10.1088/1757-899X/149/1/012162/pdf DOI : 10.1088/1757-899X/149/1/012162 |
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来源: IOP | |
【 摘 要 】
Electrical conduction of solution-processed Cu2ZnSnS4(CZTS) films has been reported in dark and under light in the temperature range of 85 to 300 K. The films show nearest neighbor hopping mode of transport at below 200 K, while above 200 K the films were dominated by thermionic emission over grain boundary barriers, following, Seto's model for polycrystalline films. The hopping energy and grain boundary barrier height of CZTS films are found be decreases under illumination due to the photoconductivity. The films were pure kesterite CZTS as revealed from X-Ray diffraction and Raman spectroscopy.
【 预 览 】
Files | Size | Format | View |
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Temperature dependence electrical conduction of solution-processed CZTS films in dark and under light | 1026KB | download |