Electrical properties and the structure changing of polycrystalline materials from the system Cu-As-Ge-S at high pressure

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Zaikova, V.^1 ; Melnikova, N.^1 ; Tebenkov, A.^1 ; Volkova, Ya^1 ; Chubareshko, E.^1

Institute of Natural Science, Ural Federal University, Ekaterinburg

620000, Russia^1

关键词: High pressure;    Large negative magnetoresistance;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012200/pdf
DOI  :  10.1088/1742-6596/741/1/012200

来源: IOP

【 摘 要 】

The results of experimental studies of magnetoresistance of polycrystalline materials (GeS)1-x(CuAsS2)xunder high pressure (up to 50 GPa) are presented. The appearance of large negative magnetoresistance was found. The structure changing during applying high pressures was studied.