Fabrication of tunnelling gap of nanomechanicalaccelerometer by focused ion beam

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Ageev, O.A.^1 ; Gusev, E. Yu^1 ; Kolomiytsev, A.S.^1 ; Lisitsyn, S.A.^1 ; Bykov, Al V.^1

Southern Federal University, Institute of Nanotechnology, Electronics and Electronic Equipment Engineering, Taganrog

347922, Russia^1

关键词: Gap formation;    High aspect ratio;    Nanomechanical;    Polysilicon surface-micromachining;    Two-layer;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012177/pdf
DOI  :  10.1088/1742-6596/741/1/012177

来源: IOP

【 摘 要 】

The two-layer polysilicon surface micromachining process flow of nanomechanical accelerometerincluded a high aspect-ratio etch step was presented.In the experiments we defined modes, and developed the technology of tunnelling gap formation using focused ion beam. The nanomechanical accelerometer crystals were fabricated by surface micromachining and focused ion beams.