Luminescence and structural properties of germanium nanocrystals formed by annealing multilayer GeOx/Al2O3 nanostructures

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Grachev, D.A.^1 ; Garakhin, S.A.^1 ; Belolipetsky, A.V.^2 ; Nezhdanov, A.V.^1 ; Ershov, A.V.^1

Department of Semiconductor Physics and Optoelectronics, Lobachevsky University, Nizhny Novgorod

603950, Russia^1

Sector of Theory of Optical and Electrical Phenomena in Semiconductors, Ioffe Institute RAS, Saint Petersburg

194021, Russia^2

关键词: Annealing temperatures;    Germanium nanocrystals;    IR absorption spectroscopy;    Nanoperiodic structures;    Physical evaporation;    Temperature range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012129/pdf
DOI  :  10.1088/1742-6596/741/1/012129

来源: IOP

【 摘 要 】

By Raman scattering, luminescence, and IR-absorption spectroscopy multilayer nanoperiodic structures Ge/Al2O3& GeOx/Al2O3have been investigated. The samples have been obtained by the physical evaporation; their properties have been varied by changing the layer thicknesses (2-20 nm) and annealing temperature (500-1000 °C). It is found that germanium nanocrystals are formed in the temperature range of 500-800 °C and exhibit intense size-depend photoluminescence at 1.2 eV and 1.8-2.0 eV.