Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Juneja, Sucheta^1,3 ; Poletayev, Sergey D.^1,2 ; Fomchenkov, Sergey^1,2 ; Khonina, Svetlana N.^1,2 ; Skidanov, Roman V.^1,2 ; Kazanskiy, Nikolay L.^1,2

Samara State Aerospace University, Samara

443086, Russia^1

Image Processing Systems Institute, Russian Academy of Sciences, Samara

443086, Russia^2

Physics of Energy Harvesting Division, CSIR - National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi

110012, India^3

关键词: Controlled process;    Etching characteristics;    Gaseous mixture;    Indium Tin Oxide films;    Micro-electronic devices;    Optoelectronic applications;    Photovoltaic devices;    Power densities;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012105/pdf
DOI  :  10.1088/1742-6596/741/1/012105

来源: IOP

【 摘 要 】

Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.