会议论文详细信息
| 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016) | |
| Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure | |
| Barko, A.V.^1 ; Pishchagin, A.A.^1 ; Grigoryev, D.V.^1,2 ; Tarasenko, V.F.^2 ; Shulepov, M.A.^2 | |
| Tomsk State University, 36 Lenin Av., Tomsk | |
| 634050, Russia^1 | |
| High Current Electronics SB RAS, 2/3 Akademichesky, Tomsk | |
| 634055, Russia^2 | |
| 关键词: Hall coefficient; Measured field; Nanosecond duration; Nonuniform electric field; P type conductivity; Physical characteristics; Positive charges; Volume discharges; | |
| Others : https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012098/pdf DOI : 10.1088/1742-6596/741/1/012098 |
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| 来源: IOP | |
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【 摘 要 】
In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure | 918KB |
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