Transport properties of single-crystalline Ising magnet SmPt2Si2

TMU International Symposium on "New Quantum Phases Emerging from Novel Crystal Structure"

Fushiya, K.^1 ; Matsuda, T.D.^1 ; Higashinaka, R.^1 ; Aoki, Y.^1

Department of Physics, Tokyo Metropolitan University, Tokyo, Hachioji

192-0397, Japan^1

关键词: Electrical transport properties;    Electronic transport properties;    Hall coefficient;    Negative magneto-resistance;    Paramagnetic state;    Short range ordering;    Single-crystalline;    Two-ordered phasis;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/683/1/012033/pdf
DOI  :  10.1088/1742-6596/683/1/012033

来源: IOP

【 摘 要 】

The electronic transport properties of a SmPt2Si2single crystal are measured, in which magnetically disordered (paramagnetic) Sm ions are expected to remain partially in the antiferromagnetically (AFM) ordered state occurring below TI= 5.1 K. In the paramagnetic state, the resistivity exhibits a shallow minimum at ∼ 11 K and a pronounced negative magnetoresistance, suggesting the occurrence of the Kondo effect and/or AFM short-range ordering. Below TI, the resistivity increases sharply, indicating a decrease in the carrier density caused by a superzone gap formation associated with the AFM transition. As regards the Hall effect, the extraordinary component is negligibly smaller than the normal component. The positive sign of the normal Hall coefficient indicates that the hole Fermi surfaces dominate the electrical transport properties. The difference in the transport properties of the two ordered phases is discussed.