InGaN/GaN heterostructures with lateral confinement for light emitting diodes

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Kotlyar, K.P.^1 ; Soshnikov, B.I.^2 ; Morozov, I.A.^1 ; Kudryashov, D.A.^1 ; Zelentsov, K.S.^1 ; Lysak, V.V.^2 ; Soshnikov, I.P.^1,3,4,5

Nanotechnology Research and Education Center, Academic University, RAS, St. Petersburg

194021, Russia^1

Department of Nanotechnology and Material Science, ITMO University, St Petersburg

192000, Russia^2

Ioffe Physical-Technical Institute of the RAS, St. Petersburg

194021, Russia^3

Institute for Analytical Instrumentation of RAS, St. Petersburg

198095, Russia^4

Saint Petersburg Electrotechnical University LETI, St. Petersburg

197376, Russia^5

关键词: Average diameter;    Fabricated arrays;    Lateral confinement;    Light emission diode;    Reactive plasmas;    Side angles;    Single structure;    Truncated cone;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012083/pdf
DOI  :  10.1088/1742-6596/741/1/012083

来源: IOP

【 摘 要 】

InGaN/GaN nanorod structure for light emission diode fabricated by the reactive plasma etching through the self-assembled Ni nano-cluster mask is presented. Fabricated array structure, presented in the form of truncated cones with average diameter height and period of nanorods is 250±50 nm, 430nm and 650±50 nm, respectively. The side angle of single structure about 80o. EL spectrum has maximum at 460 nm.