The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Reznik, R.R.^1,2,3 ; Kotlyar, K.P.^2,4 ; Ilkiv, I.V.^1,2 ; Soshnikov, I.P.^1,4,5,7 ; Kukushkin, S.A.^3,6 ; Osipov, A.V.^3,6 ; Nikitina, E.V.^1 ; Cirlin, G.E.^1,2,3,5

St. Petersburg Academic University, Nanotechnology Research and Education Centre RAS, St. Petersburg

194021, Russia^1

Peter the Great St. Petersburg Polytechnic University, St. Petersburg

195251, Russia^2

ITMO University, St. Petersburg

197101, Russia^3

Ioffe Physical Technical Institute RAS, St. Petersburg

194021, Russia^4

Institute for Analytical Instrumentation RAS, St. Petersburg

190103, Russia^5

Institute of Problems of Mechanical Engineering, Russian Academy of Science, St. Petersburg

199178, Russia^6

St-Petersburg Electrotechnical University LETI, St. Petersburg

197376, Russia^7

关键词: Growth of GaN;    Hybrid substrates;    MBE growth;    Nano scale;    Silicon substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012027/pdf
DOI  :  10.1088/1742-6596/741/1/012027

来源: IOP

【 摘 要 】

This work demonstrates the possibility of using a silicon substrate with nanoscale buffer layer of silicon carbide for growth of GaN nanowires by molecular epitaxy on. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.