Gas phase reaction study of gan in cold wall mocvd reactor by induction heating

2nd International Symposium on Application of Materials Science and Energy Materials

材料科学;能源学

Lu, Ligen^1 ; Li, Zhiming^1 ; Zhao, Lili^1 ; Guo, Runqiu^2 ; Feng, Lansheng^2

Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan, China^1

School of Mechano-Electronic Engineering, Xidian University, Xi'an, China^2

关键词: Chemical pathways;    Concentration distributions;    Dynamic equilibria;    Gas-phase reactions;    Growth of GaN;    High temperature;    Inhibitory effect;    Related substances;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/490/4/042051/pdf
DOI  :  10.1088/1757-899X/490/4/042051

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Gas reaction of GaN film in cold-wall MOCVD reactor is simulated in this work. The concentration of related substances in various chemical reactions near the cold wall has been analyzed. It is found that when TMGa and NH3 are separated from the inlet, the reaction occurs first to generate TMGa:NH3, it is not a dynamic equilibrium reaction, and the next reaction will continue. The GaN concentration distribution is negatively related to the temperature. High temperature enhances the adduct reaction and generates more trimers, and then produce more GaN particles, which have a certain inhibitory effect on the growth of GaN films. Free radicals affect chemical pathways.