Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Pishchagin, A.A.^1 ; Voitsekhovskii, A.V.^1 ; Kokhanenko, A.P.^1 ; Serokhvostov, V. Yu^1 ; Dzyadukh, S.M.^1 ; Nikiforov, A.I.^1,2

National Research Tomsk State University, Tomsk

634050, Russia^1

Rzanov Institute of Semiconductor Physics SB RAS, Novosibirsk

630090, Russia^2

关键词: Admittance spectroscopies;    Emission process;    Ge quantum dot;    Localized state;    P-i-n structure;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012015/pdf
DOI  :  10.1088/1742-6596/741/1/012015

来源: IOP

【 摘 要 】

The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured.